Direct factory supply of precision-machined technical ceramics, engineered to withstand intense thermal stress, corrosive environments, and heavy mechanical wear.
Founded in 2003, Yixing Qiangguang Ceramic Materials Co., Ltd. is a premier high-technology enterprise dedicated to the research, development (R&D), precision manufacturing, and system integration of high-performance advanced ceramic materials. Operating as one of the few domestic manufacturers in China possessing a fully vertically integrated industrial chain, our capabilities span powder synth, micro-granulation, cold isostatic pressing (CIP), high-temperature vacuum sintering, and CNC 5-axis diamond precision grinding.
Our comprehensive portfolio covers Silicon Carbide (SiC), Zirconia (ZrO2), Yttria (Y2O3), Alumina (Al2O3), Magnesia (MgO), Aluminum Nitride (AlN), Boron Nitride (BN), Silicon Nitride (Si3N4), and Aluminum Titanate ceramic plates, substrates, tubes, and custom components.
Guided by our core principle of "Creating Sustainable Value for Global Partners", we deliver cost-efficient, custom-engineered advanced technical ceramic plates tailored to strict tolerance and thermodynamic requirements. Supported by full batch traceability, rigorous quality testing, and dedicated technical after-sales engineering, we ensure total reliability across critical global industrial sectors.
Why Tier-1 OEM procurement directors, thermal process engineers, and defense contractors rely on direct China factory manufacturing for high-grade SiC ceramic plates.
In sub-7nm semiconductor fabrication, SiC plates serve as critical substrate wafer chucks, end effectors, and chemical mechanical planarization (CMP) polishing blocks. High purity (SSiC) prevents metallic ion contamination, eliminates thermal warping, and withstands aggressive plasma etching chemistry.
Defense contractors require ultra-lightweight ceramic plates with superior projectile energy dissipation. Monolithic Sintered Silicon Carbide plates provide extreme hardness (Mohs 9.5), blunting armor-piercing kinetic energy projectiles while meeting NIJ Level IV defense certifications.
Industrial kilns operating above 1380°C to 1600°C require setter plates that do not sag, oxidize, or spall under intense thermal cycling. Reaction Bonded (RBSiC) and Pressureless Sintered (SSiC) plates maximize furnace loading capacity and drop thermal energy costs by up to 30% via ultra-thin profiles.
| Physical Property Parameter | Sintered SiC (SSiC) | Reaction Bonded SiC (RBSiC) | Alumina (Al₂O₃ 99.5%) | Silicon Nitride (Si₃N₄) | Zirconia (Y-TZP) |
|---|---|---|---|---|---|
| Density (g/cm³) | 3.10 - 3.15 | 3.02 - 3.08 | 3.92 | 3.25 | 6.05 |
| Vickers Hardness (HV50) | 2400 - 2600 | 2000 - 2200 | 1600 | 1500 | 1250 |
| Thermal Conductivity (W/m·K) | 110 - 140 | 80 - 110 | 30 | 30 - 40 | 2.5 - 3.0 |
| Flexural Strength (MPa) | 400 - 450 | 250 - 300 | 350 | 750 - 850 | 1000 - 1200 |
| Max Service Temp (°C, Inert) | 1600 - 1650 | 1380 | 1600 | 1400 | 1000 |
| Coeff. of Thermal Expansion (10⁻⁶/K) | 4.0 | 4.5 | 8.0 | 3.2 | 10.3 |
From sub-micron raw powder preparation to 5-axis CNC diamond finishing—how precision engineering delivers zero-defect ceramic plates.
Ultra-pure alpha-SiC sub-micron powders are blended with proprietary sintering additives (Boron and Carbon). Micro-granulation spray drying ensures uniform particle size distribution, zero agglomeration, and superior green body density.
Utilizing high-pressure hydraulic CIP systems (up to 250 MPa), green compacts are pressed uniformly from all directions. This eliminates localized density gradients, preventing structural deformation during high-temperature sintering.
Plates are densified in high-vacuum or argon-shielded sintering furnaces at temperatures exceeding 2100°C. Sintered Silicon Carbide achieves >98.5% theoretical density with a homogeneous micro-crystalline lattice structure.
Due to SiC's extreme hardness second only to diamond, high-precision surface grinding, lapping, and CNC routing are executed using specialized diamond-coated tooling to achieve flatness tolerance within ±0.005mm.
For semiconductor wafer substrates and mechanical seal faces, chemical-mechanical polishing (CMP) achieves surface roughness as fine as Ra < 0.02 μm, delivering low friction coefficient and optimal sealing capability.
100% Non-Destructive Ultrasonic Flaw Detection, coordinate measuring machine (CMM) dimensional verification, and thermal shock integrity tests ensure compliance with international aerospace and industrial standards.
Enabling breakthrough efficiency and operational life extensions across challenging industrial environments.
In flue gas desulfurization (FGD), mining slurries, and petrochemical processing, equipment components suffer rapid degradation from combined erosion and acid corrosion. Traditional metallic alloys or rubber liners fail within months under high-velocity slurry impacts.
Solution: Custom SiC lining plates engineered by Yixing Qiangguang provide zero chemical reactivity against concentrated acids (HCl, H2SO4, HF mixtures) and extend maintenance cycles by over 800% in coal-fired power plants and chemical processing towers.
Modern wide-bandgap semiconductors (GaN/SiC power modules) dissipate intense localized heat densities. Conventional aluminum oxide substrates lack the thermal transfer rate required to prevent junction overheating.
Solution: High-thermal-conductivity SSiC ceramic substrates (140 W/m·K) provide low thermal expansion matched with Si wafer CTE, lowering die attachment stresses and maximizing power module longevity.
Our products are exported worldwide to key industrial markets including Italy, the United Kingdom, Australia, Japan, Malaysia, Thailand, Hungary, and beyond. We provide complete international trade documentation, customs compliance certification, door-to-door logistics, and flexible engineering CAD/CAM consultations to meet localized factory requirements across North America, Europe, and Asia-Pacific.
Expert engineering answers regarding material selection, tolerances, customization, and ordering lead times.
SSiC (Pressureless Sintered Silicon Carbide) is produced by sintering fine alpha-SiC powder at 2100°C without free silicon metal. It offers higher purity, superior chemical resistance in extreme acids/alkalis, maximum working temperatures up to 1600°C, and greater hardness. RBSiC (Reaction Bonded Silicon Carbide) incorporates liquid silicon infiltration, resulting in ~8-12% free silicon phase. It allows cost-effective production of ultra-large or complex shapes with zero dimensional shrinkage, but has a maximum temperature limit of 1380°C.
Through precision diamond machining and CNC lapping, we routinely achieve dimensional thickness tolerances of ±0.005 mm (±5 μm), parallelism within 0.003 mm, and surface roughness down to Ra < 0.02 μm for optical and semiconductor applications.
Silicon Carbide has nearly double the hardness of Alumina (HV2500 vs HV1400) and more than four times the thermal conductivity (110-140 W/m·K vs 30 W/m·K). SiC also possesses a significantly lower coefficient of thermal expansion, making it vastly superior for severe thermal shock and high-abrasion environments.
Yes, Yixing Qiangguang specializes in OEM/ODM custom manufacturing. We accept STEP, IGES, DWG, and PDF formats. Our engineering team assists with design-for-manufacturability (DFM) to optimize ceramic plate geometry for high strength and reduced production costs.
Prototype samples and standard stock geometries can ship within 7-10 business days. Custom tooling and precision CNC production runs typically require 3 to 4 weeks depending on tolerance specifications. We offer flexible MOQs from single-piece R&D prototypes to high-volume commercial batch production.
Explore our extended lineup of structural ceramic solutions, grinding media, and high-purity raw powders manufactured directly at our China factory.
